C&H Technology CM75DU-12F - Manual (Page 4)

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CM75DU-12F
Trench Gate Design Dual IGBTMOD™
75 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 20 nf
Output Capacitance Coes VCE = 10V, VGE = 0V – – 1.4 nf
Reverse Transfer Capacitance Cres – – 0.75 nf
Inductive Turn-on Delay Time td(on) VCC = 300V, IC = 75A, – – 100 ns
Load Rise Time tr VGE1 = VGE2 = 15V, – – 80 ns
Switch Turn-off Delay Time td(off) RG = 8.3, – – 300 ns
Times Fall Time tf Inductive Load – – 250 ns
Diode Reverse Recovery Time** trr Switching Operation – – 150 ns
Diode Reverse Recovery Charge** Qrr IE = 75A – 1.4 – μC
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, Tc Reference – 0.43 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, Tc Reference – – 0.9 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, – 0.29 °C/W
Tc Reference Point Under Chip
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.055 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).