Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB200LH120N User Manual
Page 4
VS-GB200LH120N
www.vishay.com
Vishay Semiconductors
Revision: 16-Jan-13
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Document Number: 94761
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Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Switching Loss vs. Collector Current
Fig. 4 - Switching Loss vs. Gate Resistor
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
STG
- 40
-
125
Junction to case
IGBT (per 1/2 module)
R
thJC
-
-
0.08
K/W
Diode (per 1/2 module)
-
-
0.17
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M6
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight
300
g
I
C
(A)
V
GE
(V)
0
100
200
300
400
0
5
15
10
V
CE
= 20 V
25 °C
125 °C
0
2
1
3
0
100
150
50
200
250
300
350
400
I
C
(A)
V
CE
(V)
V
GE
= 15 V
25 °C
125 °C
0
100
200
300
400
0
10
15
5
20
25
30
35
I
C
(A)
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 5
Ω
V
CC
= 600 V
E
on
E
off
E
on
, E
of
f
(mJ)
0
10
20
30
40
0
20
40
60
80
R
g
(
Ω)
E
on
, E
of
f
(mJ)
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 200 A
V
CC
= 600 V
E
on
E
off