C&H Technology ST733CLPbF Series - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94378
2 Revision: 30-Apr-08
ST733CLPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 940 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 2200 1900 3580 3100 6800 5920
A
400 Hz 2050 1660 3600 3130 3750 3240
1000 Hz 1370 1070 2900 2450 2120 1780
2500 Hz 500 370 1220 980 960 770
Recovery voltage V
R
50 50 50
V
Voltage before turn-on V
D
V
DRM
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state
current at heatsink temperature
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled 940 (350) A
55 (85) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 1900
A Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
20 000
t = 8.3 ms 20 950
t = 10 ms 100 % V
RRM
reapplied
16 800
t = 8.3 ms 17 600
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied 2000
kA 2 s
t = 8.3 ms 1820
t = 10 ms 100 % V
RRM
reapplied
1410
t = 8.3 ms 1290
Maximum I 2 √t for fusing
I 2 √t
t = 0.1 to 10 ms, no voltage reapplied 20 000 kA 2 √s
Maximum peak on-state voltage V
TM
I
TM
= 1700 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
1.63
V
Low level value of threshold voltage V
T(TO)1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum 1.09
High level value of threshold voltage V
T(TO)2
(I >
π x I
T(AV)
), T
J
= T
J
maximum 1.20
Low level value of forward slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.32
m Ω
High level value of forward slope resistance r
t2
(I > π x I
T(AV)
), T
J
= T
J
maximum 0.29
Maximum holding current I
H
T
J
= 25 °C, I
T
> 30 A 600
mA
Typical latching current I
L
T
J
= 25 °C, V
A
= 12 V, R
a
= 6 Ω, I
G
= 1 A 1000
180° el
I
TM
180° el
I
TM
100 µs
I
TM