C&H Technology VS-GB150LH120N - Manual (Page 3)

VS-GB150LH120N
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Vishay Semiconductors
Revision: 16-Jan-13 2 Document Number: 94757
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
V Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 150 A, T
J
= 25 °C - 1.87 -
V
GE
= 15 V, I
C
= 150 A, T
J
= 125 °C - 2.08 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 12.0 mA, T
J
= 25 °C 5.0 6.3 7.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 1.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 150 A, R
g
= 6.8
,
V
GE
= ± 15 V, T
J
= 25 °C
- 190 -
ns
Rise time t
r
- 60 -
Turn-off delay time t
d(off)
- 460 -
Fall time t
f
- 55 -
Turn-on switching loss E
on
- 11.2 -
mJ
Turn-off switching loss E
off
- 9.8 -
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 150 A, R
g
= 6.8 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 220 -
ns
Rise time t
r
- 60 -
Turn-off delay time t
d(off)
- 530 -
Fall time t
f
- 75 -
Turn-on switching loss E
on
- 16.7 -
mJ
Turn-off switching loss E
off
- 15.3 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
- 10.6 -
nF Output capacitance C
oes
- 0.71 -
Reverse transfer capacitance C
res
- 0.47 -
SC data I
SC
t
sc
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
 1200 V
- 650 - A
Internal gate resistance R
gint
- 1.5 - 
Stray inductance L
CE
- - 20 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.35 - m 
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 150 A
T
J
= 25 °C - 2.05 -
V
T
J
= 125 °C - 2.26 -
Diode reverse recovery charge Q
rr
I
F
= 150 A, V
R
= 600 V,
dI/dt = - 4800 A/μs,
V
GE
= - 15 V
T
J
= 25 °C - 7 -
μC
T
J
= 125 °C - 18 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 150 -
A
T
J
= 125 °C - 190 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 4.0 -
mJ
T
J
= 125 °C - 8.0 -