Vishay semiconductors – C&H Technology VS-UFB230FA60 User Manual
Page 3
VS-UFB230FA60
www.vishay.com
Vishay Semiconductors
Revision: 03-Nov-11
2
Document Number: 93641
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ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Cathode to anode breakdown voltage
V
BR
I
R
= 100 μA
600
-
-
V
Forward voltage
V
FM
I
F
= 100 A
-
1.46
1.78
I
F
= 100 A, T
J
= 125 °C
-
1.23
1.52
I
F
= 200 A
-
1.70
2.05
I
F
= 200 A, T
J
= 125 °C
-
1.50
1.78
Reverse leakage current
I
RM
V
R
= V
R
rated
-
0.1
50
μA
T
J
= 175 °C, V
R
= V
R
rated
-
0.30
2
mA
Junction capacitance
C
T
V
R
= 600 V
-
77
-
pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
-
43
-
ns
T
J
= 25 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-
83
-
T
J
= 125 °C
-
182
-
Peak recovery current
I
RRM
T
J
= 25 °C
-
7
-
A
T
J
= 125 °C
-
18
-
Reverse recovery charge
Q
rr
T
J
= 25 °C
-
290
-
nC
T
J
= 125 °C
-
1595
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
TEST
CONDITIONS
MIN. TYP. MAX.
UNITS
Junction to case, single leg conducting
R
thJC
-
-
0.43
°C/W
Junction to case, both leg conducting
-
-
0.215
Case to heatsink
R
thCS
Flat, greased surface
-
0.05
-
Weight
-
30
-
g
Mounting torque
-
1.3
-
Nm
Case style
SOT-227