Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB400AH120U User Manual
Page 4
VS-GB400AH120U
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Vishay Semiconductors
Revision: 27-May-13
3
Document Number: 94790
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. Collector Current
Fig. 4 - IGBT Switching Loss vs. Gate Resistor
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction temperature range
T
J
-
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
per module
IGBT
R
thJC
-
-
0.044
K/W
Diode
-
-
0.088
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight
300
g
0
0
1
2
3
4
5
100
200
300
400
500
600
700
800
I
C
(A)
V
CE
(V)
V
GE
= 15 V
25 °C
125 °C
0
100
200
300
400
500
600
700
800
5
4
6
7
8
9
10
11
V
GE
(V)
I
C
(A)
125 °C
25 °C
V
CE
= 20 V
I
C
(A)
E
on
, E
of
f
(mJ)
0
20
40
60
80
100
120
0
200
400
600
800
Eon
Eoff
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 2.2
Ω
V
CC
= 600 V
R
g
(
Ω)
0
20
40
60
80
100
120
140
160
180
200
0
5
10
15
20
25
E
on
E
off
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 400 A
V
CC
= 600 V
E
on
, E
of
f
(mJ)