Vishay semiconductors – C&H Technology VS-UFB201FA40 User Manual
Page 3
VS-UFB201FA40
www.vishay.com
Vishay Semiconductors
Revision: 29-Nov-11
2
Document Number: 93793
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ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Cathode to anode breakdown voltage
V
BR
I
R
= 100 μA
400
-
-
V
Forward voltage
V
FM
I
F
= 100 A
-
1.33
1.59
I
F
= 100 A, T
J
= 125 °C
-
1.19
1.28
I
F
= 200 A
-
1.56
1.91
I
F
= 200 A, T
J
= 125 °C
-
1.49
1.64
Reverse leakage current
I
RM
V
R
= V
R
rated
-
0.20
50
μA
T
J
= 175 °C, V
R
= V
R
rated
-
0.40
2
mA
Junction capacitance
C
T
V
R
= 400 V
-
76
-
pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
-
40
-
ns
T
J
= 25 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-
80
-
T
J
= 125 °C
-
160
-
Peak recovery current
I
RRM
T
J
= 25 °C
-
7
-
A
T
J
= 125 °C
-
16
-
Reverse recovery charge
Q
rr
T
J
= 25 °C
-
310
-
nC
T
J
= 125 °C
-
1300
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
TEST
CONDITIONS
MIN. TYP. MAX.
UNITS
Junction to case, single leg conducting
R
thJC
-
-
0.56
°C/W
Junction to case, both leg conducting
-
-
0.28
Case to heatsink
R
thCS
Flat, greased surface
-
0.075
-
Weight
-
30
-
g
Mounting torque
-
1.3
-
Nm
Case style
SOT-227