C&H Technology CM600HU-12F - Manual (Page 4)

3
CM600HU-12F
Trench Gate Design Single IGBTMOD™
600 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C ies – – 160 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 11 nf
Reverse Transfer Capacitance C
res
– – 6 nf
Inductive Turn-on Delay Time t
d(on)
V
CC
= 300V, I
C
= 600A, – – 600 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 400 ns
Switch Turn-off Delay Time t d(off) R G = 3.1 ⍀ , – – 900 ns
Times Fall Time t f Inductive Load – – 250 ns
Diode Reverse Recovery Time** t
rr
Switching Operation – – 300 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 600A – 11.7 –
µ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R th(j-c) Q Per IGBT, T c Reference – 0.088
°
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi, T
c
Reference – – 0.12 ° C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
'Q Per IGBT, – 0.04
°
C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.02 –
°
C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).