C&H Technology ST333C..C Series - Manual (Page 7)

www.vishay.com For technical questions, contact: [email protected] Document Number: 93678
6 Revision: 15-May-08
ST333C..C Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 720 A
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
1 E 2
1 E 3
1 E 4
1 E 1 1 E 2 1 E 3 1 E 4
50 H z 4 00
25 00
1 00
P ulse B a se w id th ( µ s)
Pe
a
k
O
n
-s
ta
te
C
u
rr
e
n
t
(A
)
1 000
1 50 0
3 00 0
20 0
50 0
50 00
ST33 3 C..C Serie s
Sin uso id a l p uls e
T = 40°C
C
Snub b er c ircu it
R = 1 0 o hm s
C = 0 .47 µF
V = 80 % V
s
s
D D RM
tp
1 E 1 1 E 2 1 E 3 1 E 4
5 0 H z
4 00
2 50 0
1 00
Pu lse B a se w id th ( µ s)
1 000
15 0 0
3 00 0
20 0 50 0
5 00 0 ST33 3C ..C Serie s
Sinuso id a l p ulse
T = 55°C
C
Snub b er circ uit
R = 1 0 o hm s
C = 0.4 7 µF
V = 80 % V
s
s
D D RM
t p
1 E 2
1 E 3
1 E 4
1 E 1 1 E 2 1 E 3 1 E 4
50 H z 40 0
2 5 00
10 0
100 0
15 00
20 0 0
2 00
50 0
P u lse Ba se w id t h ( µ s)
P
e
a
k
O
n
-s
ta
te
C
u
rr
e
n
t (
A
)
ST3 33 C.. C Se ries
Tra p ezo id a l p uls e
T = 4 0°C
d i/d t = 50 A/µs
3 0 00
Snub b e r circuit
R = 1 0 o hm s
C = 0.47 µF
V = 80 % V
s
s
D D RM
C
tp
5 00 0
1 E 1 1 E 2 1 E 3 1 E 4
50 H z
40 0
10 0
P u lse Ba se w id th ( µs)
10 00
1 5 00
20 00
2 00
50 0
2 50 0
Snub b e r circ uit
R = 1 0 o hm s
C = 0.4 7 µF
V = 80 % V
D RM
s
s
D
ST33 3C. .C Se ries
Tra p ezo id a l p uls e
T = 55°C
d i/d t = 1 00A /µs
C
3 00 0
50 00
tp
1 E 2
1 E 3
1 E 4
1 E 1 1 E 2 1 E 3 1 E 4
5 0 H z
4 00
2 50 0
10 0
100 0
15 00
20 00
3 00 0
200
5 00
P u lse B ase w id t h ( µ s)
P
e
a
k
O
n
-s
ta
te
C
u
rre
n
t (
A
)
ST33 3 C..C Serie s
Tra p e zoid a l p ulse
T = 40°C
d i/d t = 100 A/µs
Snub b er c ircuit
R = 10 o hm s
C = 0 .47 µ F
V = 80 % V
s
s
D D RM
C
50 00
tp
1 E 1 1 E 2 1 E 3 1 E 4
5 0 H z
4 00
10 0
P u lse Ba se w id th ( µ s)
10 0 0
1 50 0
20 00
2 00
50 0
ST333 C.. C Se ries
Tra p ezo id a l p uls e
T = 55°C
d i/d t = 10 0A /µs
C
2 50 0
Snub b e r circ uit
R = 1 0 o hm s
C = 0.4 7 µF
V = 80 % V
s
s
D DR M
tp
3 00 0
5 00 0