C&H Technology VS-GB300AH120N - Manual (Page 5)

VS-GB300AH120N
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Vishay Semiconductors
Revision: 06-Aug-12 4 Document Number: 93475
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Fig. 5 - Gate Charge Characteristics
V
CC
= 600 V, I
C
= 300 A, T
J
= 25 °C
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 7 - Typical Switching Times vs. I
C
V
CC
= 600 V, R
g
= 4.7 , V
GE
= ± 15 V, T
J
= 125 °C
Fig. 8 - Typical Switching Times vs. Gate Resistance
V
CC
= 600 V, I
C
= 300 A, V
GE
= ± 15 V, T
J
= 125 °C
Fig. 9 - Typical Forward Characteristics (Diode)
V
G
E
(V)
Q
g
(μC)
0 2 1 3 4
93475_05
20
0
- 8
16
4
- 4
8
12
0.1
1
10
100
0
93475_06
5 15 25 10 20 30
V
CE
(V)
C (nF)
35
C
ies
C
oes
C
res
t (ns)
I
C
(A)
0 600 200 400
10
93475_07
1000
100
t
d(off)
t
d(on)
t
f
t
r
t (ns)
R
g
( Ω)
0 10 20 30 40
10
93475_08
10 000
1000
100
t
d(off)
t
d(on)
t
f
t
r
I F
(A)
V
F
(V)
0 3 1 2
0
93475_09
400
200
100
300
125 °C
25 °C