C&H Technology CPV364M4UPbF - Manual (Page 6)

Document Number: 94489 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Sep-08 5
CPV364M4UPbF
IGBT SIP Module
(Ultrafast IGBT)
Vishay High Power Products
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec) 1
th
J
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Therm
a
l R
e
s
p
onse (Z
)
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
1 10 100
0
1000
2000
3000
4000
V , Collector-to-Emitter Voltage (V)
C
, C
apaci
tance (
pF)
CE
V
C
C
C =
=
=
= 0V,
C
C
C f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge gc , ce
res gc
oes ce gc
C
ies
C
oes
C res
0 20 40 60 80 100 120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
, G
a
te
-to
-E
m
itte
r V
o
lta
g
e
(V
)
G
GE
V = 400V
I = 10A
CC
C
0 10 20 30 40 50
0.40
0.45
0.50
0.55
0.60
0.65
0.70
R , Gate Resistance ( Ω)
Tot
al
S
w
it
chi
n
g Losses (m
J)
G
V = 480V
V = 15V
T = 25 C
I = 10A
CC
GE
J
C
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Tot
a
l S
w
it
chi
n
g Losses (m
J)
J
°
R = 10
V = 15V
V = 480V G
GE
CC
I = A 20 C
I = A 10 C
I = A 5 C
Ω
5.0