C&H Technology TBSD__210H - Manual (Page 4)

TBSD__210H
Phase Control Thyristor
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 (724)925-7272 www.pwrx.com 2115 Amperes 4500 Volts
Electrical Characteristics, Tj=25°C unless otherwise specified
Rating
Characteristic Symbol Test Conditions min typ max Units
Repetitive Peak Forward
Leakage Current I
DRM
Tj=125°C, V
DRM
=Rated 250 ma
Repetitive Peak Reverse
Leakage Current I
RRM
Tj=125°C, V
RRM
=Rated 250 ma
Peak On-State Voltage V
TM
Tj=125°C, I
TM
=2000A 1.70 V
V
TM
Model, Low Level V
0
Tj=125°C 1.130 V
VTM = V
O
+ r• I
TM
r 15% I
TM
- π•I
TM
2.75E-04 Ω
V
TM
Model, High Level V
0
Tj=125°C 1.274 V
VTM = V
O
+ r• I
TM
r π•I
TM
- I
TSM
2.46E-04 Ω
V
TM
Model, 4-Term A Tj=125°C
0.468
V
TM
= A + B•Ln(I
TM
) + B 15%I
TM
- I
TSM
0.112
C•(I
TM
) + D•(I
TM
)
½
C
0.000249
D
-0.00253
Turn-On Delay Time t
d
V
D
= 0.5•V
DRM
3.5 us
Gate Drive: 40V - 20Ω
Turn-Off Time tq Tj=125°C 600 us
dv/dt = 20V/us to 80% V
DRM
Reverse Recovery Current
I
R(Rec)
Tj=125°C 1500A -10A/us A
Reverse Recovery Charge
Q
RR
uCoul
dv/dt
(Crit)
dv/dt Tj=125°C Exp. Waveform 1000 V/us
V
D
=80% Rated
Gate Trigger Current I
GT
Tj=25°C V
D
= 12V 30 150 250 ma
Gate Trigger Voltage V
GT
0.8 2.0 4.0 V
Peak Reverse Gate Voltage V
GRM
5 V
Thermal Characteristics
Rating
Characteristic Symbol Test Conditions min typ max Units
Thermal Resistance
Junction to Case RΘ
jc
Double side cooled 0.009 0.010 °C/Watt
Case to Sink
RΘ
cs
Double side cooled 0.0015 0.002 °C/Watt
Thermal Impedance Model ZΘ
jc
Double side cooled
ZΘ
jc
(t) =
Σ(A(
N
)•(1-exp(-t/
Tau
(
N
))))
where: N = 1 2 3 4
A(N ) =
1.13E-04 7.51E-04 3.53E-03 5.61E-03
T au(N) = 6.54E-04 1.48E-02 1.89E-01 1.20E+00
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