C&H Technology ST303SPbF Series - Manual (Page 7)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94375
6 Revision: 30-Apr-08
ST303SPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 300 A
Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
I = 500 A
300 A
200 A
100 A
50 A
Ma
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(
µ
C
)
ST303S Series
T = 125 °C
J
TM
20
40
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
I = 500 A
300 A
200 A
100 A
50 A
M
a
x
imu
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t
- I
rr
(
A
)
ST303S Series
T = 125 °C
J
TM
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewidth (µs)
Pe
a
k
O
n
-s
ta
te
C
u
rr
e
n
t (
A
)
1000
1500
200
500
Snubb er circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D DRM
2000
ST303S Series
Sinusoida l pulse
T = 40°C
C
tp
1E1 1E2 1E3 1E4
50 Hz
400
100
Pulse Basewidth (µs)
1000
1500
200
500
ST303S Series
Sinusoida l p ulse
T = 65°C
C
Snub b er circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D DRM
tp
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
100
1500
200
Pulse Basewidth (µs)
P
e
ak
O
n
-s
ta
te
C
u
rr
en
t (
A
)
2500
400
1000
50 Hz
500
Snub ber c ircuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D DRM
ST303S Series
Trap ezoid al p ulse
T = 40°C
d i/ dt = 50A/ µs
C
2000
1E1 1E2 1E3 1E4
50 Hz
400
100
1000
1500
200
Pulse Basewidth (µs)
500
Snub b er c ircuit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D DRM
ST303S Series
Tra p ezoida l pulse
T = 65°C
di/ d t = 50A/µs
C
2000