C&H Technology HFA80FA120P - Manual (Page 2)

Document Number: 94075 For technical questions, contact: [email protected] www.vishay.com
Revision: 04-Aug-08 1
HEXFRED ®
Ultrafast Soft Recovery Diode, 80 A
HFA80FA120P
Vishay High Power Products
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL pending
• Totally lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA80FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such as
HV power supplies, electronic welders, motor control and
inverters. PRODUCT SUMMARY
V
R
1200 V
V
F
(typical) 2.6 V
t
rr
(typical) 25 ns
I
F(DC)
at T
C
40 A at 60 °C
SOT-227
1 4
2 3
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
1200 V
Continuous forward current I
F
T
C
= 60 °C 40
A Single pulse forward current I
FSM
T
J
= 25 °C 400
Maximum repetitive forward current I
FRM
Rated V
R,
square wave, 20 kHz, T
C
= 60 °C 72
Maximum power dissipation P
D
T
C
= 25 °C 178
W
T
C
= 100 °C 71
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to + 150 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 µA 1200 - -
V
Forward voltage V
FM
I
F
= 25 A
See fig. 1
- 2.6 3.0
I
F
= 40 A - 2.9 3.3
I
F
= 80 A, T
J
= 125 °C - 3.4 -
Reverse leakage current I
RM
V
R
= V
R
rated
See fig. 2
- 2.0 - µA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 0.5 2 mA
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 43 - pF