Vishay semiconductors – C&H Technology VS-HFA140FA120 User Manual
Page 5
VS-HFA140FA120
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Vishay Semiconductors
Revision: 20-Jul-12
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Typical Peak Recovery Current vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
60
40
20
80
100
120
0
0
50
75
25
100
150
175
125
Square wave (D = 0.50)
80 % rated V
R
applied
DC
Average Power Loss (W)
I
F(AV)
-
Average Forward Current (A)
80
60
40
20
100
120
140
0
500
400
0
200
300
100
DC
RMS limit
D = 0.20
D = 0.75
D = 0.50
D = 0.33
D = 0.25
t
rr
(ns)
dI
F
/dt (A/µs)
100
1000
50
300
250
100
150
200
I
F
= 50 A
V
R
= 200 V
T
J
= 25 °C
T
J
= 125 °C
Q
rr
(nC)
dI
F
/dt (A/µs)
100
1000
0
3000
2500
1000
1500
2000
500
I
F
= 50 A
V
R
= 200 V
T
J
= 25 °C
T
J
= 125 °C
I
rr
(A)
dI
F
/dt (A/µs)
100
1000
0
40
20
30
10
I
F
= 50 A
V
R
= 200 V
T
J
= 25 °C
T
J
= 125 °C