Vs-ga75tp60s, Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GA75TP60S User Manual
Page 4
VS-GA75TP60S
www.vishay.com
Vishay Semiconductors
Revision: 04-Mar-13
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Document Number: 94810
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
G
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction temperature
T
J
-
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
IGBT
R
thJC
-
-
0.42
K/W
Diode
-
-
1.04
Case to sink (Conductive grease applied)
R
thCS
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
Weight of module
-
150
-
g
0
25
50
75
100
125
150
0
1
2
3
1.5
2.5
4
3.5
0.5
25 °C
125 °C
V
GE
= 15 V
V
CE
(V)
I
C
(A)
0
25
50
75
100
125
150
4
6
8
10
7
9
5
25 °C
125 °C
V
CE
= 20 V
V
GE
(V)
I
C
(A)
0
25
75
50
100
125
150
0
4
2
1
3
5
6
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 18
Ω
V
CC
= 300 V
E
on
E
off
I
C
(A)
E
on
, E
of
f
(mJ)
0
20
60
40
80
100
0
8
4
2
6
10
12
E
on
, E
of
f
(mJ)
R
g
(
Ω)
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 75 A
V
CC
= 300 V
E
on
E
off