Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB300NH120N User Manual
Page 4
VS-GB300NH120N
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Vishay Semiconductors
Revision: 14-Mar-13
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Document Number: 94783
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature
T
J
-
-
150
°C
Storage temperature range
T
STG
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
0.076
K/W
Diode
-
-
0.100
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M6
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
300
g
0
0.5
1
1.5
2
2.5
3
3.5
4
I
C
(A)
0
400
200
100
300
500
600
V
CE
(V)
V
GE
= 15 V
25 °C
125 °C
I
C
(A)
0
6
7
8
10
11
9
12
13
400
200
100
300
500
600
V
GE
(V)
V
CE
= 20 V
125 °C
25 °C
0
20
10
30
40
60
50
70
80
90
100
0
200
100
300
400
500
600
I
C
(A)
E
on
, E
of
f
(mJ)
E
on
E
off
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 4.7
Ω
V
CC
= 600 V
0
50
100
150
200
250
0
10
20
30
40
50
R
g
(
Ω)
E
on
, E
of
f
(mJ)
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 300 A
V
CC
= 600 V
E
on
E
off