C&H Technology ST173SPbF Series - Manual (Page 8)

Document Number: 94367 For technical questions, contact: [email protected] www.vishay.com
Revision: 29-Apr-08 7
ST173SPbF Series
Inverter Grade Thyristors
(Stud Version), 175 A
Vishay High Power Products
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
Pulse Basewidth (µs)
20 joules per pulse
0.5
0.3
0.2
7.5
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
t
p
ST173S Series
Sinusoidal pulse
0.1
2
100 000
1
4
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
100 000
0.1
0.2
0.5
2 3
1
5 10
20 joules per pulse
t
p
ST173S Series
Rectangular pulse
dI/dt = 50 A/µs
0.3
0.4
0.1
1
10
100
0.001
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
(b)
V
GD
I
GD
(1) (2) (3)
Device: ST173S Series
(4)
Frequency limited by P
G(AV)
(1) P
GM
= 10 W, t
p
= 20 ms
(2) P
GM
= 20 W, t
p
= 10 ms
(3) P
GM
= 40 W, t
p
= 5 ms
(4) P
GM
= 60 W, t
p
= 3.3 ms
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10
Ω; t
r
≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r
≤ 1 µs
(a)
T
J = 40 °C T
J = 25 °C
T
J = 125 °C