C&H Technology CM75TU-24F - Manual (Page 4)

3
CM75TU-24F
Trench Gate Design Six IGBTMOD™
75Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 29 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 1.3 nf
Reverse Transfer Capacitance C
res
– – 0.75 nf
Inductive Turn-on Delay Time t d(on) V CC = 600V, I C = 75A, – – 100 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 50 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 4.2 ⍀ , – – 400 ns
Times Fall Time t
f
Inductive Load – – 300 ns
Diode Reverse Recovery Time** t
rr
Switching Operation – – 150 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 75A – 3.1 –
µ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT 1/6 Module, T
c
Reference – 0.28 ° C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi 1/6 Module, T
c
Reference – – 0.47
°
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
'Q Per IGBT 1/6 Module, – 0.19 ° C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied – 0.015 – ° C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).