C&H Technology VSK.105.. Series - Manual (Page 7)

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6 Revision: 08-Dec-08
VSK.105.. Series
Vishay High Power Products ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
Fig. 10 - On-State Voltage Drop Characteristics
Fig. 11 - Thermal Impedance Z
thJC
Characteristics
Fig. 12 - Gate Characteristics
Instantaneous on-state voltage (V)
Instantaneous on-state current (A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5
1
10
100
1000
Tj = 25°C
Tj = 130°C
Per leg
Square wave pulse duration (s)
Transient thermal impedance Z
thJC
(°C/W)
0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
Steady state value
RthJC = 0.22 °C/W
(DC operation)
Per leg
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
(4) (3) (2) (1)
TJ
=
-
4
0
°
C
TJ
=
2
5
°
C
TJ
=
1
2
5
°
C
a)Rec ommended load line for
b)Rec ommended load line for
VGD
IGD
Frequenc y Limited by PG(AV)
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% rated di/ dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
Rec tangular gate pulse
IRK.105.. Series
Instantaneous gate voltage (V)
Instantaneous gate current (A)
VSK.