Vs-ga50tp60s, Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GA50TP60S User Manual
Page 4
VS-GA50TP60S
www.vishay.com
Vishay Semiconductors
Revision: 27-Nov-12
3
Document Number: 94809
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction temperature
T
J
-
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
IGBT
R
thJC
-
-
0.54
K/W
Diode
-
-
1.04
Case to sink (Conductive grease applied)
R
thCS
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
Weight of module
-
150
-
g
0
0
1
2
3
4
10
20
30
40
50
60
70
80
90
100
25 °C
125 °C
V
GE
= 15 V
V
CE
(V)
I
C
(A)
V
GE
(V)
I
C
(A)
0
10
20
30
40
50
60
70
80
90
100
4
5
6
7
8
9
10
11
125 °C
25 °C
V
CE
= 20 V
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
I
C
(A)
E
on
, E
of
f
(mJ)
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 3.3
Ω
V
CC
= 300 V
E
on
E
off
R
g
(
Ω)
0
0.5
1
1.5
2
2.5
E
on
, E
of
f
(mJ)
0
5
10
15
20
25
30
35
E
on
E
off
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 50 A
V
CC
= 300 V