C&H Technology VS-GB90DA120U - Manual (Page 6)

VS-GB90DA120U
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Vishay Semiconductors
Revision: 02-Aug-12 5 Document Number: 94722
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Fig. 11 - Typical IGBT Energy Loss vs. R
g
,
T
J
= 125 °C, I
C
= 75 A, L = 500 μH,
V
CC
= 600 V, V
GE
= 15 V, Diode used HFA16PB120
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5
, V
GE
= 15 V
Fig. 13 - Typical t
rr
Diode vs. dI
F
/dt
V
RR
= 200 V, I
F
= 50 A
Fig. 14 - Stored Charge vs. dI
F
/dt of Diode
Fig. 15 - Typical Reverse Recovery Current vs. dI
F
/dt of Diode
R
g
( Ω)
Energy Losses (mJ)
4
6
8
10
12
14
0
2
4
0 10 20 30 40 50
E
on
E
off
Switching Time (µs)
R
G
( Ω)
0 20 30 10 40 50
10
10 000
1000
100
t
d(on)
t
d(off)
t
f
t
r
150
200
250
300
t rr
(ns)
50
100 1000
100
dI
F
/dt (A/μs)
25 °C
125 °C
V
R
= 200 V
I
F
= 50 A
Q
rr
(nC)
dI
F
/dt (A/μs)
1500
2000
2500
3000
500
100 1000
1000
25 °C
125 °C
V
R
= 200 V
I
F
= 50 A
dI
F
/dt (A/μs)
I RR
(A)
20
25
30
35
40
5
10
15
1000 100
25 °C
125 °C
V
R
= 200 V
I
F
= 50 A