Datasheet, Igbt sip module (fast igbt) cpv364m4fpbf, Vishay high power products – C&H Technology CPV364M4FPbF User Manual
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Document Number: 94487
For technical questions, contact: [email protected]
www.vishay.com
Revision: 01-Sep-08
1
IGBT SIP Module
(Fast IGBT)
CPV364M4FPbF
Vishay High Power Products
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED
®
soft ultrafast diodes
• Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve
• Totally lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to Vishay‘s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
Notes
(1)
Repetitive rating; V
GE
= 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
V
CC
= 80 % (V
CES
), V
GE
= 20 V, L = 10 µH, R
G
= 10
Ω (see fig. 19)
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
I
RMS
per phase (4.6 kW total)
with T
C
= 90 °C
18 A
RMS
T
J
125 °C
Supply voltage
360 Vdc
Power factor
0.8
Modulation depth (see fig. 1)
115 %
V
CE(on)
(typical)
at I
C
= 15 A, 25 °C
1.35 V
IMS-2
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
600
V
Continuous collector current, each IGBT
I
C
T
C
= 25 °C
27
A
T
C
= 100 °C
15
Pulsed collector current
I
CM
(1)
80
Clamped inductive load current
I
LM
(2)
80
Diode continuous forward current
I
F
T
C
= 100 °C
9.3
Diode maximum forward current
I
FM
80
Gate to emitter voltage
V
GE
± 20
V
Isolation voltage
V
ISOL
Any terminal to case, t = 1 minute
2500
V
RMS
Maximum power dissipation, each IGBT
P
D
T
C
= 25 °C
63
W
T
C
= 100 °C
25
Operating junction and storage
temperature range
T
J
, T
Stg
- 40 to + 150
°C
Soldering temperature
For 10 s, (0.063" (1.6 mm) from case)
300
Mounting torque
6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf · in
(N · m)