C&H Technology GT100LA120U - Manual (Page 4)

GT100LA120U
Vishay Semiconductor Italy
3 Revision 18-Mar-09
IGBT Switch
Q
g
Total Gate Charge (turn-on) 400 I
C
= 100A, V
GE
= 15V, V
CC
= 600V
Q
ge
Gate-Emitter Charge (turn-on) 120 nC
Q
gc
Gate-Collector Charge (turn-on) 170
E
on
Turn-On Switching Loss 21 I
C
= 100A
E
off
Turn-Off Switching Loss 5.5 mJ V
GE
= 15V, R
g
= 5 Ω
E
ts
Total Switching Loss 26.5 L = 500μH
E
on
Turn-On Switching Loss 23.6
E
off
Turn-Off Switching Loss 7.6 mJ I
C
= 100A, V
CC
= 600V
E ts Total Switching Loss 31.2 V
GE
= 15V, R
g
= 5 Ω
t
d(on)
Turn-on Delay Time 195 ns L = 500μH, T
J
= 125°C
t
r
Rise Time 280
t
d(off)
Turn-off Delay Time 187
t
f
Fall Time 225
RBSOA Reverse Bias safe operating area full square
DIODE
I
rr
Peak reverse recovery current 11 A T
J
= 25°C
18 T
J
= 125°C
t
rr
Reverse recovery time 128 ns T
J
= 25°C I
F
= 50A, V
R
= 200V
208 T
J
= 125°C dI/dt = 200A/μs
Q
rr
Reverse recovery charge 704 nC T
J
= 25°C
1872 T
J
= 125°C
SWITCHING CHARACTERISTICS @ T
J
= 25°C (unless otherwise specified)
PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS
T
J
= 150°C, I
C
= 270A,
R
g
= 22 Ω, V
GE
= 15 to 0V