Hexfred, Ultrafast soft recovery diode, 90 a, Vishay semiconductors – C&H Technology VS-HFA90FA120 User Manual
Page 2
VS-HFA90FA120
www.vishay.com
Vishay Semiconductors
Revision: 29-Feb-12
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Document Number: 94690
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HEXFRED
®
Ultrafast Soft Recovery Diode, 90 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Compliant to RoHS Directive 2011/65/EU
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (VS-HFA90FA120) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 Gen II package is
isolated from the copper base plate, allowing for common
heatsinks and compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
PRODUCT SUMMARY
V
R
1200 V
V
F
(typical)
2.46 V
t
rr
(typical)
35 ns
I
F(AV)
per module at T
C
90 A at 63 °C
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Cathode to anode breakdown voltage
V
R
1200
V
Continuous forward current, per leg
I
F
T
C
= 83 °C
45
A
Single pulse forward current, per leg
I
FSM
T
J
= 25 °C
400
Maximum power dissipation, per leg
P
D
T
C
= 83 °C
139
W
T
C
= 100 °C
104
RMS isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to 150
°C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA
1200
-
-
V
Forward voltage
V
FM
I
F
= 25 A
See fig. 1
-
2.46
3.0
I
F
= 40 A
-
2.68
3.3
I
F
= 25 A, T
J
= 125 °C
-
2.22
-
I
F
= 40 A, T
J
= 125 °C
-
2.52
-
I
F
= 25 A, T
J
= 150 °C
-
2.12
2.55
I
F
= 40 A, T
J
= 150 °C
-
2.43
2.96
Reverse leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-
1.5
75
μA
T
J
= 125 °C, V
R
= V
R
rated
-
0.5
2
mA
T
J
= 150 °C, V
R
= V
R
rated
-
2
5
Junction capacitance
C
T
V
R
= 1200 V
See fig. 3
-
30
-
pF