C&H Technology VS-GB75TP120U - Manual (Page 5)

VS-GB75TP120U
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Vishay Semiconductors
Revision: 17-May-13 4 Document Number: 94822
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector to Emitter Current
Fig. 7 - Typical Switching Times vs. I
C
Fig. 8 - Typical Switching Times vs.Gate Resistance R
g
Fig. 9 - Diode Typical Forward Characteristics
15
12
9
6
3
0
Q
g
(nC)
V
G
E
(V)
0 250 750 500 1000
V
CC
= 600 V
T
J
= 25 °C
I
C
= 75 A
0 5 10 15 20 25 30 35
10 1
10 0
10 -1
V
CE
(V)
C (nF)
C
ies
C
oes
C
res
0 25 50 75 100 125 150 175
10 3
10 2
10 1
I
C
(A)
t (ns)
t
d(off)
t
d(on)
t
f
t
r
V
GE
= ± 15 V
T
J
= 125 °C
V
CC
= 600 V
R
g
= 15 Ω
R
g
( Ω)
0 20 40 60 80 100 120
10 4
10 -1
t (ns)
10 3
10 2
V
GE
= ± 15 V
T
J
= 125 °C
V
CC
= 600 V
I
C
= 75 A
t
d(off)
t
d(on)
t
f
t
r
150
125
100
75
50
25
0
0 0.5 1.5 1 2 2.5 3
V
F
(V)
I F
(A)
25 °C 125 °C