Vishay high power products, Hexfred, Ultrafast soft recovery diode, 2 x 16 a – C&H Technology HFA32PA120C User Manual
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Document Number: 93095
2
Revision: 29-Jul-08
HFA32PA120C
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 16 A
ELECTRICAL SPECIFICATIONS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 µA
1200
-
-
V
Maximum forward voltage
V
FM
I
F
= 16 A
See fig. 1
-
2.5
3.0
I
F
= 32 A
-
3.2
3.93
I
F
= 16 A, T
J
= 125 °C
-
2.3
2.7
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-
0.75
20
µA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
-
375
2000
Junction capacitance
C
T
V
R
= 200 V
See fig. 3
-
27
40
pF
Series inductance
L
S
Measured lead to lead 5 mm from package body
-
8.0
-
nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Reverse recovery time
See fig. 5, 10
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/µs, V
R
= 30 V
-
30
-
ns
t
rr1
T
J
= 25 °C
I
F
= 16 A
dI
F
/dt = 200 A/µs
V
R
= 200 V
-
90
135
t
rr2
T
J
= 125 °C
-
164
245
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C
-
5.8
10
A
I
RRM2
T
J
= 125 °C
-
8.3
15
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C
-
260
675
nC
Q
rr2
T
J
= 125 °C
-
680
1838
Peak rate of fall of recovery
current during t
b
See fig. 8
dI
(rec)M
/dt1
T
J
= 25 °C
-
120
-
A/µs
dI
(rec)M
/dt2
T
J
= 125 °C
-
76
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
T
lead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
R
thJC
-
-
0.83
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount
-
-
80
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased
-
0.50
-
Weight
-
2.0
-
g
-
0.07
-
oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style TO-247AC (JEDEC)
HFA32PA120C