High power rectifier diodes vs24ddr12l, Vishay high power products, Rohs – C&H Technology VS24DDR12L User Manual
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Document Number: 93892
For technical questions, contact: [email protected]
www.vishay.com
Revision: 22-Apr-08
1
High Power Rectifier Diodes
VS24DDR12L
Vishay High Power Products
FEATURES
• Standard recovery diode
• Anode metal - nickel plate molybdenum disc
ORDERING INFORMATION TABLE
PRODUCT SUMMARY
Junction size
Ø 24 mm
V
RRM
class
1200 V
Passivation process
Silicone rubber
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
Maximum forward voltage
V
FM
T
J
= 25 °C, I
F
= 1000 A
1.35
V
Maximum repetitive reverse voltage
V
RRM
T
J
= 150 °C, I
RRM
= 15 mA
1200
MECHANICAL DATA
Nominal back metal composition
Al-Ni-Au
Nominal front metal composition
Nickel plate molybdenum disc
Chip dimensions
Ø 24 mm (see dimensions - link at the end of datasheet)
Recommended storage environment
Storage in original container, in desiccated nitrogen, with no contamination
1
-
Vishay HPP device
2
-
Chip dimension in millimeters
4
-
Type of device: D = Standard recovery diode
5
-
Passivation: R = Rubber for all junctions
6
-
Voltage code x 100 = V
RRM
(12 = 1200 V)
7
-
Metallization: L = Nickel plate molybdenum disc (anode)
Al-Ni-Au
(cathode)
3
-
Device identifier between chip with same diameter
Device code
5
1
3
2
4
6
7
VS
24
D
D
R
12
L
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95158