Performance curves, Mitsubishi hvigbt modules – C&H Technology CM800HB-66H User Manual
Page 4
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
800
400
0
10
0
2
4
6
1200
8
1600
0
8
6
4
2
0
400
800
1200
1600
V
GE
=15V
T
j
= 25
°
C
T
j
= 125
°
C
1600
800
400
0
1200
20
0
4
8
12
16
V
CE
=10V
T
j
= 25
°
C
T
j
= 125
°
C
0
20
16
12
8
4
10
8
6
4
2
0
T
j
= 25
°
C
I
C
= 1600A
I
C
= 800A
I
C
= 320A
T
j
=25
°
C
V
GE
=13V
V
GE
=12V
V
GE
=11V
V
GE
=10V
V
GE
=9V
V
GE
=8V
V
GE
=7V
V
GE
=14V
V
GE
=15V
V
GE
=20V
10
1
2 3
10
–1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25
°
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
CAPACITANCE CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE V
EC
(
V
)
EMITTER CURRENT I
E
(A)
0
1600
1200
800
400
8
6
4
2
0
T
j
= 25
°
C
T
j
= 125
°
C