C&H Technology VS-GB200NH120N - Manual (Page 5)

VS-GB200NH120N
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Vishay Semiconductors
Revision: 16-Jan-13 4 Document Number: 94759
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 7 - Typical Switching Time vs. I
C
Fig. 8 - Typical Switching Times vs. Gate Resistance R
g
Fig. 9 - Diode Typical Forward Characteristics
- 10
0
10
20
0 1 2 3
V
G
E
(V)
Q
g
(μC)
V
CC
= 600 V
T
J
= 25 °C
I
C
= 200 A
C (nF)
V
CE
(V)
10 1
10 2
10 0
10 -1
0 10 20 30 40
C
oes
C
res
C
ies
0 100 300 400 200
10
2
10 3
10
1
t (ns)
I
C
(A)
t
d(off)
t
d(on)
t
f
t
r
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 5 Ω
V
CC
= 600 V
0 20 10 40 30
10 2
10 3
10 4
10 1
t (ns)
R
g
( Ω)
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 200 A
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
0
100
200
300
400
0 1 2 3 4
I F
(A)
V
F
(V)
25 °C
125 °C