C&H Technology PM50B6L1C060 - Manual (Page 5)

PM50B6L1C060
Photo Voltaic IPM
H-Bridge + 2 Choppers
50 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
4 03/11 Rev. 0
Electrical and Mechanical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Part
Circuit Current I
D
V
D
= 15V, V
CIN
= 15V, V
N1
-V
NC
— 6.5 12 mA
V
D
= 15V, V
CIN
= 15V, V
*P1
-V
*PC
— 1.6 4 mA
Input ON Threshold Voltage V
th(on)
Applied between U
P
-V
UPC
, 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage V
th(off)
V
P
-V
VPC
, U
N
- V
N
- W
N
-Br-V
NC
1.7 2.0 2.3 Volts
Short Circuit Trip Level SC -20°C ≤ T
j
≤ 125°C, V
D
= 15V 75 — — Amperes
Short Circuit Current Delay Time t
off(SC)
V
D
= 15V — 0.2 — µs
Over Temperature Protection OT Trip Level 135 — — °C
(Detect Temperature of IGBT) OT
(hys)
Hysteresis — 20 — °C
Supply Circuit Under-voltage Protection UV
t
Trip Level 11.5 12.0 12.5 Volts
(-20°C ≤ T
j
≤ 125°C) UV
r
Reset Level — 12.5 — Volts
Fault Output Current* 2 I
FO(H)
V
D
= 15V, V
FO
= 15V — — 0.01 mA
I
FO(L)
V
D
= 15V, V
FO
= 15V — 10 15 mA
Fault Output Pulse Width* 2 t
FO
V
D
= 15V 1.0 1.8 — ms
Thermal Characteristics, T
j
= 25°C unless otherwise specified
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance R
th(j-c)Q
Inverter IGBT (Per 1 Element)* 1 — — 0.74 °C/Watt
R
th(j-c)D
Inverter FWDi (Per 1 Element)* 1 — — 1.28 °C/Watt
R
th(j-c)Q
Converter IGBT (Per 1 Element)* 1 — — 0.74 °C/Watt
R
th(j-c)D
Converter FWDi (Per 1 Element)* 1 — — 1.28 °C/Watt
R
th(j-c)D
Converter Diode (Per 1 Element)* 1 — — 1.28 °C/Watt
Contact Thermal Resistance R
th(c-f)
Case to Fin (Per 1 Element)* 1 , — 0.060 — °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Inverter Supply Voltage V
CC
Applied across P-N Terminals ≤450 Volts
Control Supply Voltage* 3 V
D
Applied between V
UP1
-V
UPC
, 15.0 ± 1.5 Volts
V
VP1
-V
VPC
, V
N1
-V
NC
Input ON Voltage V
CIN(on)
Applied between U
P
-V
UPC
, ≤0.8 Volts
Input OFF Voltage V
CIN(off)
V
P
-V
VPC
, U
N
- V
N
- W
N
-Br-V
NC
≥9.0 Volts
PWM Input Frequency f
PWM
Using Application Circuit Input Signal of IPM, ≤20 kHz
3-Phase Sinusoidal PWM VVVF Inverter
Arm Shoot-through Blocking Time t
DEAD
For IPMs Each Input Signals ≥2.0 µs
*1 When using this value, R
th(s-a)
should be measured just under the chips.
*2 Fault output is given only when the internal SC, OT and UV protections schemes of either upper or lower devide operate to protect it.
Fault output of SC protection given pulse. Fault output of OT, UV protection given pulse while over trip level.
*3 With ripple satisfying the following conditions: dv/dt swing ≤5V/µs ; variation ≤2V peak-to-peak.