C&H Technology CM800HA-34H - Manual (Page 5)

Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
5
3
2
7 10 2
10 –1
7
2 3 5 7 10 3 2 3 5
5
5
3
2
10 0
5
7
5
3
2
7 10 2
10 –1
7
2 3 5 7 10 3 2 3 5
5
5
3
2
10 0
5
t d(off)
V CC = 850V, V GE = ± 15V
R G = 2.5
Ω
, T j = 125
°
C
Inductive load
t d(on)
t r
t f
V CC = 850V, T j = 125 ° C
Inductive load
V
GE =
±
15V, R G = 2.5
Ω
t rr
I rr
7
5
3
2
10 2
7
5
5
3
2
10 3
10 –2
10 –3 10 –2 10 –1 10 0
7
5
3
2
10 –1
7
5
3
2
10 0
10 1
7
5
3
2
2 3 5 7 2 3 5 7 2 3 5 7
20
16
12
8
4
0
8000 10000 6000 0 2000 4000
V CC = 850V
I C = 800A
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES
(
µ s
)
COLLECTOR CURRENT I C (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(
µ
s
)
EMITTER CURRENT I E (A)
REVERSE RECOVERY CURRENT I
rr
(
A
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j
–
c)
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(
V
)
GATE CHARGE Q G (nC)
2.5
2.0
1.5
1.0
0.5
0
0 10 5 15 20 30 25
GATE RESISTANCE ( Ω )
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
SWITCHING ENERGY
( J/P
)
V CC = 850V, I C = 800A,
V GE =
±
15V, Tj = 125
°
C,
Inductive load
E on
E off
E rec
0
0.2
0.4
0.6
0.8
1.0
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
CURRENT (A)
SWITCHING ENERGY
( J/P
)
0 800 400 1200 1600
V CC = 850V, V GE =
±
15V,
R G = 2.5
Ω
, Tj = 125
°
C,
Inductive load
E on
E off
E rec
Single Pulse
T
C = 25
°
C
R th(j – c)Q = 0.0135K/ W
R th(j – c)R = 0.042K/ W