Vishay semiconductors – C&H Technology VS-GB75TP120N User Manual
Page 2
VS-GB75TP120N
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
1
Document Number: 94712
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Half Bridge IGBT Power Module, 1200 V, 75 A
FEATURES
• High short circuit capability, self limiting to 6 x I
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• AC inverter drivers
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C
75 A
V
CE(on)
(typical)
at I
C
= 75 A, T
J
= 25 °C
1.80 V
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Gate to emitter voltage
V
GES
± 20
Collector current
I
C
T
C
= 25 °C
150
A
T
C
= 80 °C
75
Pulsed collector current
I
CM
(1)
t
p
= 1 ms
150
Diode continuous forward current
I
F
T
C
= 80 °C
75
Diode maximum forward current
I
FM
(1)
t
p
= 1 ms
150
Maximum power dissipation
P
D
T
J
= 150 °C
543
W
Short circuit withstand time
T
SC
T
J
= 125 °C
10
μs
I
2
t-value, diode
V
R
= 0 V, t = 10 ms, T
J
= 125 °C
1050
A
2
s
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
2500
V