Vishay high power products, Rohs – C&H Technology VS230LM06CS02CB User Manual
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Document Number: 93835
For technical questions, contact: [email protected]
www.vishay.com
Revision: 31-Mar-08
1
Fast Recovery Diodes
VS230LM06CS02CB
Vishay High Power Products
FEATURES
• 100 % tested at probe
• Bondable top metal
• Wafer in box, and die in chip carrier
Note
(1)
Nitrogen flow on die edge
PRODUCT SUMMARY
Junction size
Square 230 mils
Wafer size
4"
V
RRM
class
600 V
Passivation process
Glassivated MOAT
Reference Vishay HPP
packaged part
40EPF Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
Maximum forward voltage
V
FM
T
J
= 25 °C, I
F
= 20 A
1080
mV
Maximum repetitive reverse voltage
V
RRM
(1)
T
J
= 25 °C, I
RRM
= 100 µA
600
V
Reverse recovery time
t
rr
T
J
= 25 °C, I
F
= 1 A, -dI/dt = 100 A/µs
60
ns
MECHANICAL DATA
Nominal back metal composition (thickness)
Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness)
100 % Al (20 µm)
Chip dimensions
230 x 230 mils - see dimensions (link at the end of datasheet)
Wafer diameter
100 mm, with standard < 110 > flat
Wafer thickness
260 µm ± 10 µm
Maximum width of sawing line
45 µm
Reject ink dot size
Ø 0.25 mm minimum
Ink dot location
See dimensions (link at the end of datasheet)
Recommended storage environment
Storage in original container, in desiccated nitrogen, with no contamination