St303clpbf series, Vishay high power products, Current carrying capability – C&H Technology ST303CLPbF Series User Manual
Page 3: On-state conduction
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Document Number: 94374
2
Revision: 30-Apr-08
ST303CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
CURRENT CARRYING CAPABILITY
FREQUENCY
UNITS
50 Hz
1130
950
1800
1540
5660
4990
A
400 Hz
1010
820
1850
1570
2830
2420
1000 Hz
680
530
1560
1300
1490
1220
2500 Hz
230
140
690
510
540
390
Recovery voltage V
R
50
50
50
V
Voltage before turn-on V
D
V
DRM
V
DRM
V
DRM
Rise of on-state current dI/dt
50
-
-
A/µs
Heatsink temperature
40
55
40
55
40
55
°C
Equivalent values for RC circuit
10/0.47 10/0.47
10/0.47
Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
Maximum average on-state
current at heatsink temperature
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
515 (190)
A
55 (85)
°C
Maximum RMS on-state current
I
T(RMS)
DC at 25 °C heatsink temperature double side cooled
995
A
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
7950
t = 8.3 ms
8320
t = 10 ms
100 % V
RRM
reapplied
6690
t = 8.3 ms
7000
Maximum I
2
t for fusing
I
2
t
t = 10 ms
No voltage
reapplied
316
kA
2
s
t = 8.3 ms
289
t = 10 ms
100 % V
RRM
reapplied
224
t = 8.3 ms
204
Maximum I
2
√t for fusing
I
2
√t
t = 0.1 to 10 ms, no voltage reapplied
3160
kA
2
√s
Maximum peak on-state voltage
V
TM
I
TM
= 1255 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
2.16
V
Low level value of threshold voltage
V
T(TO)1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum
1.44
High level value of threshold voltage
V
T(TO)2
(I >
π x I
T(AV)
), T
J
= T
J
maximum
1.48
Low level value of forward slope resistance
r
t1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum
0.57
m
Ω
High level value of forward slope resistance
r
t2
(I >
π x I
T(AV)
), T
J
= T
J
maximum
0.56
Maximum holding current
I
H
T
J
= 25 °C, I
T
> 30 A
600
mA
Typical latching current
I
L
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
Ω, I
G
= 1 A
1000
180° el
I
TM
180° el
I
TM
100 µs
I
TM