Phase control thyristors vs255sg..hcb series, Vishay high power products, Rohs – C&H Technology VS255SG..HCB Series User Manual
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Document Number: 93839
For technical questions, contact: [email protected]
www.vishay.com
Revision: 28-Mar-08
1
Phase Control Thyristors
VS255SG..HCB Series
Vishay High Power Products
FEATURES
• 100 % tested at probe
• Solderable SCR
• Wafer in box, and die in chip carrier
Note
(1)
Nitrogen flow on die edge
PRODUCT SUMMARY
Junction size
Square 250 mils
Wafer size
4"
V
RRM
class
600 to 1200 V
Passivation process
Glassivated MESA
Reference Vishay HPP
packaged part
N/a
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
Maximum on-state voltage
V
TM
T
J
= 25 °C, I
T
= 25 A
1.25
V
Maximum repetitive reverse/forward voltage
V
RRM
/V
DRM
(1)
T
J
= 25 °C, I
RRM
/I
DRM
= 100 µA
600 to 1200
Maximum required DC gate current to trigger
I
GT
T
J
= 25 °C, anode supply = 6 V, resistive load
80
mA
Maximum required DC gate voltage to trigger
V
GT
2
V
Holding current range
I
H
Anode supply = 6 V, resistive load
5 to 100
mA
Maximum latching current
I
L
300
MECHANICAL DATA
Nominal back metal composition (thickness)
Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness)
Chip dimensions
250 x 250 mils - see dimensions (link at the end of datasheet)
Wafer diameter
100 mm, with standard < 110 > flat
Wafer thickness
330 µm ± 10 µm
Maximum width of sawing line
130 µm
Reject ink dot size
Ø 0.25 mm minimum
Ink dot location
See dimensions (link at the end of datasheet)
Recommended storage environment
Storage in original container, in desiccated nitrogen, with no contamination