Electrical characteristics continued – Texas Instruments TPS54810 User Manual
Page 4
TPS54810
SLVS420B − MARCH 2002 − R EVISED FEBRUARY 2005
www.ti.com
4
ELECTRICAL CHARACTERISTICS CONTINUED
T
J
= −40°C to 125°C, V
I
= 4 V to 6 V unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain
1 kΩ COMP to AGND
(1)
90
110
dB
Error amplifier unity gain bandwidth
Parallel 10 kΩ, 160 pF COMP to AGND
(1)
3
5
MHz
Error amplifier common mode input voltage
range
Powered by internal LDO
(1)
0
VBIAS
V
Input bias current, VSENSE
VSENSE = V
ref
60
250
nA
Output voltage slew rate (symmetric), COMP
1.0
1.4
V/µs
PWM COMPARATOR
PWM comparator propagation delay time, PWM
comparator input to PH pin (excluding dead-
time)
10-mV overdrive
(1)
70
85
ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
0.82
1.20
1.40
V
Enable hysteresis voltage, SS/ENA
(1)
0.03
V
Falling edge deglitch, SS/ENA
(1)
2.5
µs
Internal slow-start time
2.6
3.35
4.1
ms
Charge current, SS/ENA
SS/ENA = 0V
3
5
8
µA
Discharge current, SS/ENA
SS/ENA = 1.3 V, V
I
= 1.5 V
1.5
2.3
4.0
mA
POWER GOOD
Power good threshold voltage
VSENSE falling
90
%V
ref
Power good hysteresis voltage
(1)
3
%V
ref
Power good falling edge deglitch
(1)
35
µs
Output saturation voltage, PWRGD
I
(sink)
= 2.5 mA
0.18
0.3
V
Leakage current, PWRGD
V
I
= 3.6 V
1
µA
CURRENT LIMIT
Current limit
V
I
= 4.5 V
(1)
,
output shorted
9
11
A
Current limit
V
I
= 6 V
(1)
,
output shorted
10
12
A
Current limit leading edge blanking time
100
ns
Current limit total response time
200
ns
THERMAL SHUTDOWN
Thermal shutdown trip point
(1)
135
150
165
_C
Thermal shutdown hysteresis
(1)
10
_C
OUTPUT POWER MOSFETS
P
MOSFET it h
V
I
= 6 V
(2)
26
47
Ω
r
DS(on)
Power MOSFET switches
V
I
= 4.5 V
(2)
30
60
mΩ
(1)
Specified by design
(2)
Matched MOSFETs, low-side r
DS(on)
production tested, high-side r
DS(on)
production tested.