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Philips BGD906 User Manual

Page 5

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2001 Nov 01

5

NXP Semiconductors

Product specification

860 MHz, 21.5 dB gain power doubler
amplifier

BGD906; BGD906MI

handbook, halfpage

0

Vo

(dBmV)

f (MHz)

CTB

(dB)

200

−50

−60

−80

−90

−70

52

48

40

36

44

400

600

800

MGS661

(1)

(1)

(2)

(3)
(4)

(2)

(4)

(3)

Fig.2

Composite triple beat as a function of
frequency under tilted conditions.

(1) V

o

.

(2) Typ. +3

σ.

Z

S

= Z

L

= 75

Ω; V

B

= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);

tilt = 3.5 dB at

−6 dB offset (550 to 750 MHz).

(3) Typ.

(4) Typ.

−3 σ.

handbook, halfpage

0

Vo

(dBmV)

f (MHz)

Xmod

(dB)

200

−50

−60

−80

−90

−70

52

48

40

36

44

400

600

800

MGS662

(1)

(1)

(3)

(2)

(4)

(3)

(2)

(4)

Fig.3

Cross modulation as a function of frequency
under tilted conditions.

(1) V

o

.

(2) Typ. +3

σ.

Z

S

= Z

L

= 75

Ω; V

B

= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);

tilt = 3.5 dB at

−6 dB offset (550 to 750 MHz).

(3) Typ.

(4) Typ.

−3 σ.

handbook, halfpage

0

Vo

(dBmV)

f (MHz)

CSO

(dB)

200

−50

−60

−80

−90

−70

52

48

40

36

44

400

600

800

MGS663

(1)

(1)

(2)

(2)

(3)

(4)

(3)

(4)

Fig.4

Composite second order distortion as a
function of frequency under tilted
conditions.

(1) V

o

.

(2) Typ. +3

σ.

Z

S

= Z

L

= 75

Ω; V

B

= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);

tilt = 3.5 dB at

−6 dB offset (550 to 750 MHz).

(3) Typ.

(4) Typ.

−3 σ.

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