Philips BZA800AL Series - Manual (Page 3)

2002 Jan 11 3
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800AL series
THERMAL CHARACTERISTICS
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient all diodes loaded 410 K/W
R
th j-s
thermal resistance from junction to solder point;
note 1 one diode loaded 200 K/W
all diodes loaded 185 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage I
F
= 200 mA
− −
1.3 V
I
R
reverse current
BZA856AL V
R
= 3 V
− −
1 000 nA
BZA862AL V
R
= 4 V
− −
500 nA
BZA868AL V
R
= 4.3 V
− −
100 nA
V
Z
working voltage I
Z
= 1 mA
BZA856AL 5.32 5.6 5.88 V
BZA862AL 5.89 6.2 6.51 V
BZA868AL 6.46 6.8 7.14 V
r
dif
differential resistance I
Z
= 1 mA
BZA856AL
− −
400
Ω
BZA862AL
− −
300
Ω
BZA868AL
− −
200
Ω
S
Z
temperature coefficient I
Z
= 1 mA
BZA856AL
−
0.3
−
mV/K
BZA862AL
−
1.6
−
mV/K
BZA868AL
−
2.2
−
mV/K
C
d
diode capacitance f = 1 MHz; V
R
= 0
BZA856AL
− −
125 pF
BZA862AL
− −
105 pF
BZA868AL
− −
90 pF
I
ZSM
non-repetitive peak reverse current t
p
= 1 ms; T
amb
= 25
°C
BZA856AL
− −
2.2 A
BZA862AL
− −
2.1 A
BZA868AL
− −
2 A