Philips BGA2711 - Manual (Page 3)

2001 Oct 19 3
NXP Semiconductors Product specification
MMIC wideband amplifier BGA2711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL RESISTANCE
CHARACTERISTICS
V
S
= 5 V; I
S
= 12.6 mA; f = 1 GHz; T
j
= 25
C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
DC supply voltage RF input AC coupled

6 V
I
S
supply current

20 mA
P
tot
total power dissipation T
s
 80 C 
200 mW
T
stg
storage temperature
65
+150
C
T
j
operating junction temperature

150
C
P
D
maximum drive power

10 dBm
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to solder
point P
tot
= 200 mW; T
s
 80 C
300 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
supply current 10 12.6 16 mA
|s
21
| 2 insertion power gain f = 1 GHz

13.1

dB
f = 2 GHz

13.9

dB
R
L IN
return losses input f = 1 GHz

11

dB
f = 2 GHz

10

dB
R
L OUT
return losses output f = 1 GHz

18

dB
f = 2 GHz

13

dB
NF noise figure f = 1 GHz

4.8

dB
f = 2 GHz

4.8

dB
BW bandwidth at
s
21
 2 3 dB below flat gain at 1 GHz 
3.6

GHz
P
L(sat)
saturated load power f = 1 GHz

2.8

dBm
f = 2 GHz

0.6

dBm
P
L 1 dB
load power at 1 dB gain compression; f = 1 GHz
 0.7 
dBm
at 1 dB gain compression; f = 2 GHz
 1.8 
dBm
IP3
(in)
input intercept point f = 1 GHz
 4.8 
dBm
f = 2 GHz
 8.5 
dBm
IP3
(out)
output intercept point f = 1 GHz

8.3

dBm
f = 2 GHz

5.4

dBm