Philips BGD712 - Manual (Page 5)

2001 Nov 02 5
NXP Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD712
handbook, halfpage
200 0 400 800 600
MCD842
f (MHz)
CTB
(dB)
− 50
− 60
− 80
− 90
− 70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
(1) V
o
.
(2) Typ. +3 .
Z
S
= Z
L
= 75 ; V
B
= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ. 3 .
handbook, halfpage
200 0 400 800 600
MCD843
f (MHz)
Xmod
(dB)
− 50
− 60
− 80
− 90
− 70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
(1) V
o
.
(2) Typ. +3 .
Z
S
= Z
L
= 75 ; V
B
= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ. 3 .
handbook, halfpage
200 0 400 800 600
MCD844
f (MHz)
CSO
(dB)
− 50
− 60
− 80
− 90
− 70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.4 Composite second order distortion as a
function of frequency under tilted
conditions.
(1) V
o
.
(2) Typ. +3 .
Z
S
= Z
L
= 75 ; V
B
= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ. 3 .