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Characteristics – Philips BGY885B User Manual

Page 3

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2001 Nov 14

3

Philips Semiconductors

Product specification

860 MHz, 20 dB gain push-pull amplifier

BGY885B

CHARACTERISTICS

Table 1

Bandwidth 40 to 860 MHz; V

B

= 24 V; T

mb

= 30

°

C; Z

S

= Z

L

= 75

Notes

1. f

p

= 55.25 MHz; V

p

= 44 dBmV;

f

q

= 805.25 MHz; V

q

= 44 dBmV;

measured at f

p

+ f

q

= 860.5 MHz.

2. Measured according to DIN45004B:

f

p

= 851.25 MHz; V

p

= V

o

;

f

q

= 858.25 MHz; V

q

= V

o

6 dB;

f

r

= 860.25 MHz; V

r

= V

o

6 dB;

measured at f

p

+ f

q

f

r

= 849.25 MHz.

3. The module normally operates at V

B

= 24 V, but is able to withstand supply transients up to 30 V.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

G

p

power gain

f = 50 MHz

19.5

20.5

dB

f = 860 MHz

20

dB

SL

slope cable equivalent

f = 40 to 860 MHz

0

2

dB

FL

flatness of frequency response

f = 40 to 860 MHz

±

0.3

dB

s

11

input return losses

f = 40 to 80 MHz

20

dB

f = 80 to 160 MHz

18.5

dB

f = 160 to 320 MHz

17

dB

f = 320 to 640 MHz

15.5

dB

f = 640 to 860 MHz

14

dB

s

22

output return losses

f = 40 to 80 MHz

20

dB

f = 80 to 160 MHz

18.5

dB

f = 160 to 320 MHz

17

dB

f = 320 to 640 MHz

15.5

dB

f = 640 to 860 MHz

14

dB

s

21

phase response

f = 50 MHz

45

+45

deg

CTB

composite triple beat

49 channels flat;
V

o

= 44 dBmV;

measured at 859.25 MHz

60

dB

CSO

composite second order distortion

49 channels flat;
V

o

= 44 dBmV;

measured at 860.5 MHz

60

dB

d

2

second order distortion

note 1

68

dB

V

o

output voltage

d

im

=

60 dB; note 2

57.5

59

dBmV

NF

noise figure

f = 50 MHz

5

dB

f = 550 MHz

5.5

dB

f = 650 MHz

6.5

dB

f = 750 MHz

6.5

dB

f = 860 MHz

7.5

dB

I

tot

total current consumption (DC)

note 3

235

mA