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Dynamic characteristics, Tda8566, Nxp semiconductors – Philips TDA8566 User Manual

Page 10

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TDA8566_6

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 06 — 15 October 2007

10 of 21

NXP Semiconductors

TDA8566

2

×

40 W/2

stereo BTL car radio power amplifier

11. Dynamic characteristics

Table 8.

Dynamic characteristics

V

P

= 14.4 V; T

amb

= 25

°

C; R

L

= 2

; f

i

= 1 kHz; measured in test circuit of

Figure 9

; unless

otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

P

o

output power

THD = 0.5 %

25

30

-

W

THD = 10 %

33

40

-

W

THD = 30 %

45

55

-

W

V

P

= 13.5 V; THD = 0.5 %

-

25

-

W

V

P

= 13.5 V; THD = 10 %

-

35

-

W

THD = 0.5 %; R

L

= 4

16

19

-

W

THD = 10 %; R

L

= 4

21

25

-

W

THD = 30 %; R

L

= 4

28

35

-

W

V

P

= 13.5 V;

THD = 0.5 %; R

L

= 4

-

14

-

W

V

P

= 13.5 V; THD = 10 %;

R

L

= 4

-

22

-

W

THD

total harmonic
distortion

P

o

= 1 W

-

0.1

-

%

V

CLIP

= 0.6 V

[1]

-

8

-

%

P

o

= 1 W; R

L

= 4

-

0.05

-

%

B

power bandwidth

THD = 0.5 %; P

o

=

1 dB

with respect to 25 W

-

20 to
20000

-

Hz

f

ro(l)

low frequency roll
off

1 dB

[2]

-

25

-

Hz

f

ro(h)

high frequency roll
off

1 dB

20

-

-

kHz

G

v

closed loop voltage
gain

25

26

27

dB

SVRR

supply voltage
ripple rejection

operating

[3]

50

60

-

dB

mute

[3]

50

-

-

dB

standby

[3]

80

-

-

dB

Z

i

input impedance

differential

100

120

150

k

single-ended

50

60

75

k

|∆

Z

i

|

input impedance
mismatch

-

2

-

%

V

n(o)

noise output
voltage

operating; R

s

= 0

[4]

-

85

120

µ

V

operating; R

s

= 10 k

[4]

-

100

-

µ

V

mute; independent of R

s

[4]

-

60

-

µ

V

α

cs

channel separation

P

o

= 25 W; R

s

= 10 k

45

50

-

dB

|∆

G

v

|

channel unbalance

-

-

1

dB