Dynamic characteristics, Tda8566, Nxp semiconductors – Philips TDA8566 User Manual
Page 10
TDA8566_6
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 06 — 15 October 2007
10 of 21
NXP Semiconductors
TDA8566
2
×
40 W/2
Ω
stereo BTL car radio power amplifier
11. Dynamic characteristics
Table 8.
Dynamic characteristics
V
P
= 14.4 V; T
amb
= 25
°
C; R
L
= 2
Ω
; f
i
= 1 kHz; measured in test circuit of
; unless
otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
P
o
output power
THD = 0.5 %
25
30
-
W
THD = 10 %
33
40
-
W
THD = 30 %
45
55
-
W
V
P
= 13.5 V; THD = 0.5 %
-
25
-
W
V
P
= 13.5 V; THD = 10 %
-
35
-
W
THD = 0.5 %; R
L
= 4
Ω
16
19
-
W
THD = 10 %; R
L
= 4
Ω
21
25
-
W
THD = 30 %; R
L
= 4
Ω
28
35
-
W
V
P
= 13.5 V;
THD = 0.5 %; R
L
= 4
Ω
-
14
-
W
V
P
= 13.5 V; THD = 10 %;
R
L
= 4
Ω
-
22
-
W
THD
total harmonic
distortion
P
o
= 1 W
-
0.1
-
%
V
CLIP
= 0.6 V
-
8
-
%
P
o
= 1 W; R
L
= 4
Ω
-
0.05
-
%
B
power bandwidth
THD = 0.5 %; P
o
=
−
1 dB
with respect to 25 W
-
20 to
20000
-
Hz
f
ro(l)
low frequency roll
off
−
1 dB
-
25
-
Hz
f
ro(h)
high frequency roll
off
−
1 dB
20
-
-
kHz
G
v
closed loop voltage
gain
25
26
27
dB
SVRR
supply voltage
ripple rejection
operating
50
60
-
dB
mute
50
-
-
dB
standby
80
-
-
dB
Z
i
input impedance
differential
100
120
150
k
Ω
single-ended
50
60
75
k
Ω
|∆
Z
i
|
input impedance
mismatch
-
2
-
%
V
n(o)
noise output
voltage
operating; R
s
= 0
Ω
-
85
120
µ
V
operating; R
s
= 10 k
Ω
-
100
-
µ
V
mute; independent of R
s
-
60
-
µ
V
α
cs
channel separation
P
o
= 25 W; R
s
= 10 k
Ω
45
50
-
dB
|∆
G
v
|
channel unbalance
-
-
1
dB