Rainbow Electronics SIR-320ST3F - Manual

SIR-320ST3F
Sensors
1/3
Infrared light emitting diode, top view type
SIR-320ST3F
The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
marking it ideal for compact optical control equipment.
!
! ! ! Applications
Optical control equipment
Light source for remote control devices
!
! ! ! Features
1) Compact ( φ3.1mm).
2) High efficiency, high output P
O
=9.0mW (I
F
=50mA).
3) Wide radiation angle θ=±18deg.
4) Emission spectrum well suited to silicon detectors
( λ
P
=940nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
! ! ! ! External dimensions (Units : mm)
1.1
Max.1
2.5
± 1
Min.24
5.2
± 0.3
2 − 0.5
4 − 0.6
2
± 0.2
φ 3.1 ± 0.2
φ 3.8 ± 0.3
(2.5)
1 Anode 2 Cathode
1
2
Notes:
1. Unspecified tolerance
shall be ± 0.2.
2. Dimension in parenthesis are
show for reference.
!
! ! ! Absolute maximum ratings (Ta = 25 °C)
Parameter Symbol
P D
I F
I FP
∗
V R
Topr
Tstg
Limits
− 25~ + 85
− 40~ + 85
75
5
100
1.0
Unit
mA
V
mW
A
° C
° C
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width = 0.1msec, duty ratio 1%