Rainbow Electronics MAX8508 - Manual (Page 2)

MAX8506/MAX8507/MAX8508
PWM Step-Down DC-DC Converters with 75m Ω
Bypass FET for WCDMA and cdmaOne Handsets
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ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
BATTP, BATT, OUT, SHDN, SKIP, HP, REFIN,
FB to GND ...........................................................-0.3V to +6V
PGND to GND .......................................................-0.3V to +0.3V
BATT to BATTP......................................................-0.3V to +0.3V
OUT, COMP, REF to GND.......................-0.3V to (V
BATT
+ 0.3V)
LX Current (Note 1) ...............................................................1.6A
OUT Current (Note 1)............................................................3.2A
Output Short-Circuit Duration.....................................Continuous
Continuous Power Dissipation (T A = +70°C)
16-Pin Thin QFN (derate 16.9mW/°C above +70°C) ...1.349W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
ELECTRICAL CHARACTERISTICS
(V BATT = V BATTP = 3.6V, SHDN = SKIP = BATT, HP = GND, V REFIN = 1.932V (MAX8506), V REFIN = 1.70V (MAX8507),
C REF = 0.22µF, T A = -40°C to +85°C, unless otherwise noted. Typical values are at T A = +25°C.) (Note 2)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Input BATT Voltage 2.6 5.5 V
Undervoltage Lockout Threshold V BATT rising 2.150 2.35 2.575 V
Undervoltage Lockout Hysteresis 40 mV
SKIP = GND (normal mode) 180 250
Quiescent Current
SKIP = BATT, 1MHz switching 1750
µA
Quiescent Current in Dropout HP = BATT 775 1000 µA
Shutdown Supply Current SHDN = GND 0.1 5 µA
V REFIN = 1.932V, I OUT = 0 to 600mA (MAX8506) 3.375 3.40 3.425
V REFIN = 0.426V, I OUT = 0 to 30mA (MAX8506) 0.740 0.75 0.760
V
REFIN
= 1.700V, I
OUT
= 0 to 600mA (MAX8507) 3.375 3.40 3.425
OUT Voltage Accuracy
V REFIN = 0.375V, I OUT = 0 to 30mA (MAX8507) 0.740 0.75 0.760
V
MAX8506 250 485
OUT Input Resistance
MAX8507 275 535
k
Ω
REFIN Input Current -1 0.1 +1 µA
MAX8506 1.76
REFIN to OUT Gain
MAX8507 2.00
V/V
Reference Voltage 1.225 1.25 1.275 V
Reference Load Regulation 10µA < I REF < 100µA 2.5 8.5 mV
Reference Bypass Capacitor 0.1 0.22 µF
FB Voltage Accuracy FB = COMP (MAX8508) 0.7275 0.75 0.7725 V
FB Input Current V FB = 1V (MAX8508) 0.03 0.175 µA
V BATT = 3.6V 0.4 0.825
P-Channel On-Resistance I LX = 180mA
V BATT = 2.6V 0.5
Ω
V BATT = 3.6V 0.3 0.5
N-Channel On-Resistance I LX = 180mA
V BATT = 2.6V 0.35
Ω
HP/Bypass P-Channel
On-Resistance
I
OUT
= 180mA, V
BATT
= 3.6V 0.075 0.110 Ω
Note 1: LX has internal clamp diodes to PGND and BATT. Applications that forward bias these diodes should take care not to exceed
the IC’s package power-dissipation limits.