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9list of materials – Texas Instruments TPS40090EVM-002 User Manual

Page 24

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SLUU195 − June 2004

24

TPS40090 Multi-Phase Buck Converter and TPS2834 Drivers Steps-Down from 12-V to 1.5-V at 100 A

9

List of Materials

The following table lists the TPS40090EVM−002 components corresponding to the schematic
shown in Figure 1.

Table 2. List of Materials

Reference

Designator

QTY

Description

Size

Manufacturer

Part Number

C1, C4

2

Capacitor, OS−CON, 68

µ

F, 20 V, 40 m

, 20%

10.3mm (F8)

Sanyo

20SVP68M

C2, C5, C7,
C8,C9, C10,
C11

7

Capacitor, ceramic, 1000−pF, 25 V, X7R,

±

5%

603

muRata

GRM39SL102J25

C3,C17, C18,
C19, C21

5

Capacitor, dielectric, 1.0

µ

F, 16 V, X7R,

±

10%

805

muRata

GRM40B105K16

C6

0

603

Std

Std

C12

1

Capacitor, ceramic, 0.01

µ

F, 50 V, X7R,

±

5%

805

muRata

GRM40UJ103J50

C13, C14, C15,
C16, C20, C22

6

Capacitor, dielectric, 4.7

µ

F, 16 V, X5R,

±

10%

1206

muRata

GRM42−

65X5R475K16

C30, C31, C32,
C33, C34, C35,
C36, C37

8

Capacitor, dielectric, 10

µ

F, 25 V, X5R

1210

TDK

C3225X5R1E106M

C38, C39, C40,
C41

4

Capacitor, ceramic, 1000−pF, 50 V, X7R,

±

5%

805

muRata

GRM40TH102J50

C42, C43, C44,
C45

4

Capacitor, ceramic, 0.01

µ

F, 50 V, COG

805

TDK

C2012COG1H103JT

C23, C24, C25,
C26,C46,
C47,C50, C51

8

Capacitor, POSCAP, 220

µ

F, 2.5 V, 15 m

, 20%

7343 (D)

Sanyo

2R5TPE220M

C48, C49, C52,
C53

4

Capacitor, Ceramic, 10

µ

F, 6.3 V, X5R

1206

TDK

C3216X5R0J106M

D1, D2, D3, D4,
D6

5

Diode, dual schottky, 200 mA, 30 V

SOT-23

Vishay−Liteon

BAT54C

D7, D8, D9,
D10

4

Diode, zener, 6.2 V, 350 mW

SOT−23

Diodes, Inc.

BZX84C6V2

J1, J2, J9, J10

1

Lug, Solderless, #2 − #8 AWG, 1/4

Copper

524600

ILSCO

J4, J5, J6, J7,
J8

5

Connector, shielded, test jack, vertical

0.0125 DIA

Johnson

Components

129−0701−202

L1, L2, L3, L4

4

Inductor, SMT, 0.62

µ

H, 30 A, 1.75 m

0.524 x 0.492

TDK

SPM12550−R62M300

Q2, Q3, Q4, Q5

4

MOSFET, N-channel, 30 V, 18 A, 8.0 m

PWRPAK

S0−8

Vishay−Siliconix

Si7860DP

Q6, Q7, Q8, Q9

0

MOSFET, N-channel, 30 V, 18 A, 8.0 m

PWRPAK

S0−8

Vishay−Siliconix

Si7860DP

Q1, Q10, Q11,
Q12, Q13, Q14,
Q15, Q16

8

MOSFET, N-channel, 30 V, 29 A, 3 m

PWRPAK

S0−8

Vishay−Siliconix

Si7880DP

R1

1

Resistor, chip, 8.25 k

, 1/16−W, 1%

603

Std

Std

R2

1

Resistor, chip, 6.19 k

,, 1/16−W, 1%

603

Std

Std

R3

0

603

Std

Std

R4, R9, R11

3

Resistor, chip, 10 k

, 1/16−W, 1%

603

Std

Std

R5

1

Resistor, chip, 8.66 k

, 1/16−W, 1%

603

Std

Std

R6

1

Resistor, chip, 49.9

, 1/16−W, 1%

603

Std

Std

R7

1

Resistor, chip, 40.2 k

, 1/16−W, 1%

603

Std

Std

R8, R16, R55,
R56, R59, R60,
R61

7

Resistor, chip, 10−Ohms, 1/16−W, 1%

603

Std

Std

R10

1

Resistor, chip, 475 k

, 1/16−W, 5%

603

Std

Std

R12

1

Resistor, chip, 64.9 k

, 1/16−W, 1%

603

Std

Std