Fairchild PowerTrench MOSFET - Manual (Page 5)

FDD6690A Rev. EW)
Typical Characteristics
0
2
4
6
8
10
0 5 10 15 20 25
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 12 A
V
DS
= 10V
15V
20V
0
300
600
900
1200
1500
1800
0 5 10 15 20 25 30
V DS , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I D
, DRAIN CURRENT (A)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R θ JA = 96 o C/W
T
A
= 25 o C
10ms
1ms
100µs
10
0
20
40
60
80
100
0.01 0.1 1 10 100
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R θ JA
= 96°C/W
T A = 25°C
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
0.0001
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R θ JA
(t) = r(t) * R θ JA
R θ JA
= 96 °C/W
T
J
- T
A
= P * R θ JA
(t)
Duty Cycle, D = t 1 / t 2
P(pk)
t 1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6690A