Fairchild PowerTrench MOSFET - Manual (Page 2)

FDD6690A Rev. EW)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
E
AS
Drain-Source Avalanche Energy Single Pulse, V
DD
= 15 V, I
D
= 12A 180 mJ
I
AS
Drain-Source Avalanche Current 12 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= 250
µ
A 30 V
∆
BV DSS
∆ T
J
Breakdown Voltage Temperature
Coefficient I
D
= 250
µ
A,Referenced to 25
°
C 24 mV/
°
C
I
DSS Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1 µ
A
I
GSS
Gate–Body Leakage V
GS
= ± 20 V, V
DS
= 0 V ± 100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250
µ
A 1 1.9 3 V
∆
V GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient I
D
= 250
µ
A,Referenced to 25
°
C –5 mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance V
GS
= 10 V, I
D
= 12 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 12 A,T
J
=125
°
C
7.7
9.9
11.4
12
14
19 m
Ω
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 5 V 50 A
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 12 A 47 S
Dynamic Characteristics
C
iss
Input Capacitance 1230 pF
C
oss
Output Capacitance 325 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
150 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 1.5 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 10 19 ns
t
r
Turn–On Rise Time 7 13 ns
t
d(off)
Turn–Off Delay Time 29 46 ns
t
f
Turn–Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
12 21 ns
Q
g
Total Gate Charge 13 18 nC
Q
gs
Gate–Source Charge 3.5 nC
Q
gd
Gate–Drain Charge
V
DS
= 15V, I
D
= 12 A,
V
GS
= 5 V
5.1 nC
FDD6690A