Vs-gt50tp60n, Vishay semiconductors, Preliminary – Vishay VS-GT50TP60N User Manual
Page 3: Thermal and mechanical specifications
Preliminary
VS-GT50TP60N
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Vishay Semiconductors
Revision: 22-Dec-11
3
Document Number: 94666
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
G
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction temperature range
T
J
-
-
175
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
per ½ module
IGBT
R
thJC
-
-
0.72
K/W
Diode
-
-
1.02
Case to sink (Conductive grease applied)
R
thCS
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
Weight of module
-
150
-
g
0
10
20
30
40
50
60
70
80
90
100
0
0.5
1
1.5
2
2.5
3
3.5
25 °C
175 °C
V
GE
= 15 V
V
CE
(V)
I
C
(A)
V
GE
(V)
I
C
(A)
0
10
20
30
40
50
60
70
80
90
100
4
5
6
7
8
9
10
11
175 °C
25 °C
V
CE
(V) = 50 V
E (mJ)
I
C
(A)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
10
20
30
40
50
60
70
80
90 100
V
GE
= ± 15 V
T
J
=
125 °C
R
G
= 3.3
Ω
V
CC
= 300 V
E
on
E
off
R
G
(
Ω)
E (mJ)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
5
10
15
20
25
30
35
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 50 A
V
CC
= 300 V
E
on
E
off