Panasonic 2SD1328 User Manual
Silicon npn epitaxial planar type, Transistors, Absolute maximum ratings t
![background image](/manuals/189466/1/background.png)
Transistors
1
Publication date: February 2003
SJC00216BED
2SD1328
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Low ON resistance R
on
• High foward current transfer ratio h
FE
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
25
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
12
V
Collector current
I
C
0.5
A
Peak collector current
I
CP
1
A
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 µA, I
E
= 0
25
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
20
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µA, I
C
= 0
12
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 25 V, I
E
= 0
100
nA
Forward current transfer ratio
*1,2
h
FE
V
CE
= 2 V, I
C
= 0.5 A
200
800
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 0.5 A, I
B
= 20 mA
0.13
0.40
V
Base-emitter saturation voltage
*1
V
CE(sat)
I
C
= 0.5 A, I
B
= 50 mA
1.2
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
10
pF
ON resistance
*3
R
ON
1.0
Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 1D
Rank
R
S
T
No-rank
h
FE
200 to 350
300 to 500
400 to 800
200 to 800
Marking symbol
1DR
1DS
1DT
1D
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: R
on
Measuremet circuit
V
V
1 k
Ω
R
on
= V
B
× 1 000 (Ω)
V
A
− V
B
f
= 1 kHz
V
= 0.3 V
V
B
I
B
= 1 mA
V
A
Product of no-rank is not classified and have no marking symbol for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).